Concept

Potential well

Related publications (165)

Optical stark effect and coherent gain of excitons in a semiconductor microcavity

We report transient sub-picosecond pump and probe experiments performed on a semiconductor microcavity into which quantum wells have been inserted. The cavity is featuring resonance and strong coupling with the exciton. It is strongly and resonantly excite ...

1997

Characteristics of InAsP/InGaAsP Edge Emitting Laser Diodes Obtained by Localised Fusion on GaAs Substrates

Elyahou Kapon, Jean-François Carlin, Alok Rudra, Vladimir Iakovlev

Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...

1997

Role of carrier-phonon interaction on the exciton formation in quantum wells

Vincenzo Savona, Paolo Schwendimann

We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...

1997

Microroughness and exciton localization in (Al,Ga)As/GaAs quantum wells

Nicolas Grandjean

We report on microscopic photoluminescence and photoluminescence excitation of thin Al0.3Ga0.7As/GaAs quantum wells grown on exactly oriented (001) GaAs substrates. The experiments are done at low temperature by selectively exciting a few mu m(2) of the sa ...

1997

Effect of plasma shape on confinement and MHD behaviour in TCV

Olivier Sauter, Basil Duval, Stefano Coda, Timothy Goodman, Yves Martin, Jean-Marc Moret, Stefano Alberti, Ivo Furno, Minh Quang Tran, Patrick Blanchard, Holger Reimerdes, Jean-Philippe Hogge, René Chavan, Damien Fasel, Xavier Llobet, Henri Weisen, Jonathan Bryan Lister, Richard Pitts, Antoine Pochelon, Roland Behn, Francis Troyon, Philippe Marmillod, Gilbert Tonetti, Albert Perez, Blaise Marlétaz, Pierre-François Isoz, Jean-Claude Magnin, Paolo Bosshard, Christian Deschenaux

The TCV tokamak (B-T < 1.5 T, R approximate to 0.88 m, a < 0.25 m) has produced a wide variety of plasma configurations, both diverted and limited, with elongations kappa(a), ranging from 0.9 to 2.58, triangularities delta(a) from -0.7 to 1 as well as disc ...

1997

Relevance of dephasing processes for the ultrafast rise of emission from resonantly created excitons in quantum wells

Benoît Marie Joseph Deveaud

We present a comparative study of time-integrated four-wave-mixing and femtosecond emission under resonant excitation on excitons in weakly disordered GaAs quantum wells. At highest exciton densities when dephasing dominates the spectral width (homogeneous ...

1997

Photoluminescence and carrier dynamics in GaAs quantum wells

Vincenzo Savona, Paolo Schwendimann

We use a rate equation model in order to reproduce the dynamics of two-dimensional excitons and free carriers in a time resolved photoluminescence experiment. We investigate the dynamics of the exciton formation from free electron-hole pairs, and the evolu ...

1997

Effect on confinement of edge-localized modes in TCV

Yves Martin, Jean-Marc Moret, Henri Weisen, Richard Pitts, Antoine Pochelon

The effect of ELMs on confinement in ohmic H-modes has been investigated by analysing the rates of change of global parameters such as the electron content and the stored energy as a function of ELM frequency. In double-null H-modes, ELMs are found to expe ...

1996

Influence of Disorder and Exciton-Exciton Interactions on 4-Wave-Mixing in Quantum-Wells

The interplay of disorder effects and exciton-exciton interactions in the four-wave-mixing process in quantum wells is investigated. Experiments are performed employing femtosecond and picosecond pulses to have either good temporal or good spectral resolut ...

1995

Cathodoluminescence investigations of three-dimensional island formation in quantum wells

Romuald Houdré, Jean-François Carlin, Alok Rudra

When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split in ...

1995

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.