Concept

Heterojunction

Related publications (479)

Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt2HgSe3

Monolayer jacutingaite (Pt2HgSe3) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been performed so far on this material, neither in monolayer nor in the bulk. By using a dedic ...

IOP PUBLISHING LTD2020

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

Maneesha Rupakula

Field-effect transistors (FETs) have established themselves as a leading platform for electrical detection of chemical and biological species. Their advantages over other optical, mechanical sensing platforms are attributed to being miniaturizable, mechani ...

EPFL2020

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Giulia Tagliabue

Among all plasmonic metals, copper (Cu) has the greatest potential for realizing optoelectronic and photochemical hot-carrier devices, thanks to its CMOS compatibility and outstanding catalytic properties. Yet, relative to gold (Au) or silver (Ag), Cu has ...

AMER CHEMICAL SOC2020

Degradation Mechanism and Stability Improvement of Dopant-Free ZnO/LiFx/Al Electron Nanocontacts in Silicon Heterojunction Solar Cells

Mathieu Gérard Boccard, Wenjie Lin

Dopant-free passivating contacts for photovoltaics have the potential to be deposited at low costs, while providing excellent surface passivation and low contact resistance. However, one pressing issue of dopant-free carrier selective contacts is their low ...

2020

Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions

Oleg Yazyev, Kristians Cernevics, Michele Pizzochero

The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated he ...

AMER PHYSICAL SOC2020

Electronic, excitonic and magnetic properties of two-dimensional heterostructures

Alberto Ciarrocchi

Two-dimensional (2D) crystals such as graphene or transition metal dichalcogenides (TMDCs) are a fascinating class of quantum materials. These compounds are obtained isolating the single atomic sheets that normally form bulk layered crystals, and the reduc ...

EPFL2020

High-Efficiency Silicon Heterojunction Solar Cells: Materials, Devices and Applications

Mathieu Gérard Boccard, Yining Li

Photovoltaic (PV) technology offers an economic and sustainable solution to the challenge of increasing energy demand in times of global warming. The world PV market is currently dominated by the homo-junction crystalline silicon (c-Si) PV technology based ...

2020

Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Yi Wang

Intrinsic and extrinsic pinning and passivation of m-plane cleavage facets of GaN n- p- n junctions were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. On freshly cleaved and clean p-type GaN( 10 1 0) ...

AMER INST PHYSICS2020

Lateral transport in silicon solar cells

Christophe Ballif, Gabriel Christmann, Mathieu Gérard Boccard, Jan Haschke

We investigate lateral charge carrier transport in crystalline silicon solar cells. Under typical operation illumination of high-efficiency solar cells, a significant population of electrons and holes exist in the silicon wafer, leading to a non-negligible ...

AIP2020

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Christophe Ballif, Franz-Josef Haug, Quentin Thomas Jeangros, Xavier Niquille, Andrea Ingenito, Matthieu Despeisse, Gizem Nogay, Philippe Wyss, Mario Joe Lehmann, Josua Andreas Stückelberger

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

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