Publications related to Dielectric loss

Towards Flexible, Scalable and Low Loss Non-reciprocal System in Silicon Photonics

Christophe Marcel Georges Galland, Yang Liu

A silicon photonic non-reciprocal isolator/circulator system with time-dependent permittivity tensor is demonstrated. In addition to being broadband and low loss, the architecture is scalable to achieve high extinction ratio with reconfigurable isolation p ...

Ieee2016

Dissipation engineering of high-stress silicon nitride nanobeams

Tobias Kippenberg, Dalziel Joseph Wilson, Amir Hossein Ghadimi

High-stress Si

_3

_4

nanoresonators have become an attractive choice for electro- and optomechanical devices. Membrane resonators can achieve quality factor (

Q

) - frequency (

f

) products exceeding

10^{13}

Hz, enabling (in principle) quantum coheren ...

2016

Performance of ITER Correction Busbar Conductor Samples CBCN2 and CBCN3

Pierluigi Bruzzone, Kamil Sedlák, Boris Stepanov, Fang Liu, Bo Liu

The correction busbar (CB) conductors for the ITER project are being produced in China. The second China CB conductor sample (CBCN2, Phase II of conductor testing) and the third CB conductor sample (CBCN3, Phase III testing) were made of the WST NbTi stran ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

Mario Andres Chavarria Varon

We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current - voltage I(V) and capacitance - voltage C(V) characteri ...

Electrochemical Soc Inc2016

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

Mihai Adrian Ionescu, Mariazel de la Candelas Maqueda López, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Emanuele Andrea Casu

A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release o ...

IEEE2016

Silicones with enhanced permittivity for dielectric elastomer actuators

Frank Nüesch

The research efforts for silicone based elastomers with high dielectric permittivity (epsilon') intensified significantly in the last years since such materials would allow the construction of dielectric elastomer actuators (DEA) with low operation voltage ...

Spie-Int Soc Optical Engineering2016

Security Constrained Unit Commitment With Dynamic Thermal Line Rating

Mario Paolone, Mostafa Nick, Omid Alizadeh Mousavi

The integration of the dynamic line rating (DLR) of overhead transmission lines (OTLs) in power systems secu- rity constrained unit commitment (SCUC) potentially enhances the overall system security as well as its technical/economic performances. This pape ...

Institute of Electrical and Electronics Engineers2016

Highly stretchable dielectric elastomer composites containing high volume fractions of silver nanoparticles

Heinrich Hofmann, Jose Enrico Quijano Quinsaat

The dielectric permittivity (epsilon') of a polymeric material can be significantly increased when blended with conductive fillers at concentrations approaching the percolation threshold. However, reproducible synthesis of such composites is after decades ...

Royal Society of Chemistry2015

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Dissipation engineering of high-stress silicon nitride nanobeams

Tobias Kippenberg, Dalziel Joseph Wilson, Amir Hossein Ghadimi

High-stress Si

_3

_4

nanoresonators have become an attractive choice for electro- and optomechanical devices. Membrane resonators can achieve quality factor (

Q

) - frequency (

f

) products exceeding

10^{13}

Hz, enabling (in principle) quantum coheren ...

2016

Dielectric loss

Towards Flexible, Scalable and Low Loss Non-reciprocal System in Silicon Photonics

Multimodel Approach to the Optical Properties of Molecular Dyes in Solution

Dissipation engineering of high-stress silicon nitride nanobeams

The variation of PbTiO3 bandgap at ferroelectric phase transition

Performance of ITER Correction Busbar Conductor Samples CBCN2 and CBCN3

Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

Silicones with enhanced permittivity for dielectric elastomer actuators

Security Constrained Unit Commitment With Dynamic Thermal Line Rating

Highly stretchable dielectric elastomer composites containing high volume fractions of silver nanoparticles

Graph Chatbot

Chat with Graph Search

Towards Flexible, Scalable and Low Loss Non-reciprocal System in Silicon Photonics

Electrical Investigation of Porous Silicon/p-Si Heterojunction Prepared by Electrochemical Etching

Highly stretchable dielectric elastomer composites containing high volume fractions of silver nanoparticles

Silicones with enhanced permittivity for dielectric elastomer actuators

Dissipation engineering of high-stress silicon nitride nanobeams

The variation of PbTiO3 bandgap at ferroelectric phase transition

Performance of ITER Correction Busbar Conductor Samples CBCN2 and CBCN3

Multimodel Approach to the Optical Properties of Molecular Dyes in Solution

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

Security Constrained Unit Commitment With Dynamic Thermal Line Rating