Concept

Area density

Related publications (28)

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The purpose of this study is to assess the damage caused to the equipment (beamdump, collimators etc) in case of an accident involving full impact of the LHC beam. First, the FLUKA code [1] is used to calculate the proton energy loss in solid carbon and th ...

2010

Fulde-Ferrell-Larkin-Ovchinnikov state in the one-dimensional attractive Hubbard model and its fingerprint in spatial noise correlations

We explore the pairing properties of the one-dimensional attractive Hubbard model in the presence of finite spin polarization. The correlation exponents for the most important fluctuations are determined as a function of the density and the polarization. W ...

2008

The goal of this thesis is to contribute to the understanding of charge transport in organic field-effect transistors (OFETs) made of pentacene. Organic thin-film transistors (OTFTs) with active layers thicknesses of 5, 10, 20, and 100 nm were fabricated i ...

EPFL2007

Atomistic structure of the Si(100)-SiO2 interface: A synthesis of experimental data

Alfredo Pasquarello, Angelo Bongiorno

We construct atomistic models of the Si(100)-SiO2 interface in accord with available experimental data. Combining classical and first-principles simulation methods, we generate transition structures from crystalline silicon to disordered SiO2. The generati ...

2003

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We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density s ...

2002

The impact of irradiation temperature on the microstructure of F82H martensitic/ferritic steel irradiated in a proton and neutron mixed spectrum

Yong Dai

F82H low-activation martensitic steel was irradiated in the Swiss Spallation Neutron Source (SINQ) Target-III to irradiation doses of 10-12 dpa in a temperature range of 140-360 degreesC. Transmission electron microscope observations have been performed to ...

2002

Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements

Raphaël Butté

The density of states at the Fermi level N(E-F) has been measured on hydrogenated polymorphous (pm-Si:H) silicon samples using both capacitance measurements on Schottky barriers and space-charge-limited current measurements on n(+)/i/n(+) structures. From ...

1999

Towards Amperometric Immunosensor Devices

In contrast to optical immunosensors, the electrochemical detection of an immunoanalytical reaction does require a labeling, but allows an easier discrimination of specific and non-specific binding. We present a concept and first results for a multivalent ...

1997