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We explore the pairing properties of the one-dimensional attractive Hubbard model in the presence of finite spin polarization. The correlation exponents for the most important fluctuations are determined as a function of the density and the polarization. W ...
In contrast to optical immunosensors, the electrochemical detection of an immunoanalytical reaction does require a labeling, but allows an easier discrimination of specific and non-specific binding. We present a concept and first results for a multivalent ...
We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density s ...
F82H low-activation martensitic steel was irradiated in the Swiss Spallation Neutron Source (SINQ) Target-III to irradiation doses of 10-12 dpa in a temperature range of 140-360 degreesC. Transmission electron microscope observations have been performed to ...
The density of states at the Fermi level N(E-F) has been measured on hydrogenated polymorphous (pm-Si:H) silicon samples using both capacitance measurements on Schottky barriers and space-charge-limited current measurements on n(+)/i/n(+) structures. From ...
The purpose of this study is to assess the damage caused to the equipment (beamdump, collimators etc) in case of an accident involving full impact of the LHC beam. First, the FLUKA code [1] is used to calculate the proton energy loss in solid carbon and th ...
The goal of this thesis is to contribute to the understanding of charge transport in organic field-effect transistors (OFETs) made of pentacene. Organic thin-film transistors (OTFTs) with active layers thicknesses of 5, 10, 20, and 100 nm were fabricated i ...
We construct atomistic models of the Si(100)-SiO2 interface in accord with available experimental data. Combining classical and first-principles simulation methods, we generate transition structures from crystalline silicon to disordered SiO2. The generati ...
