Inductively coupled plasma

Summary

An inductively coupled plasma (ICP) or transformer coupled plasma (TCP) is a type of plasma source in which the energy is supplied by electric currents which are produced by electromagnetic induction, that is, by time-varying magnetic fields. Operation There are three types of ICP geometries: planar (Fig. 3 (a)), cylindrical (Fig. 3 (b)), and half-toroidal (Fig. 3 (c)). In planar geometry, the electrode is a length of flat metal wound like a spiral (or coil). In cylindrical geometry, it is like a helical spring. In half-toroidal geometry, it is a toroidal solenoid cut along its main diameter to two equal halves. When a time-varying electric current is passed through the coil, it creates a time-varying magnetic field around it, with flux \Phi=\pi r^2 H=\pi r^2 H_0 \cos \omega t, where r is the distance to the center of coil (and of the quartz tube). According to the Faraday–Lenz's law of induction, this creates azimuthal electromotive force in the rarefi

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https://en.wikipedia.org/wiki/Inductively_coupled_plasma

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RF bias to suppress post-oxidation of mu c-Si:H films deposited by inductively-coupled plasma using a planar RF resonant antenna

Ivo Furno, Philippe Frédérique Bruno Guittienne, Alan Howling, Rémy Jacquier, Stéphanie Jost

2018

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One challenge for microcrystalline silicon (mu c-Si:H) deposition is to achieve high deposition rates while maintaining high quality films. In this work, an inductively-coupled plasma (ICP) is used to deposit mu c-Si:H on glass substrates by means of a novel planar resonant antenna at 13.56 MHz. No particle formation occurs in the low pressure (5 Pa) plasma, but the films suffer post-oxidation. By embedding a 5 MHz RF-biased substrate, films deposited simultaneously with and without RF bias are compared. It is shown that large area, low pressure (5 Pa), particle-free ICP deposition at 1 nm/s of mu c-Si:H films can be obtained without post-oxidation by means of a planar resonant antenna, provided that RF substrate bias is included for independent control of the ion energy. (C) 2017 Elsevier Ltd. All rights reserved.

2018

Complex image method for RF antenna-plasma inductive coupling calculation in planar geometry. Part II: measurements on a resonant network

Ivo Furno, Philippe Frédérique Bruno Guittienne, Alan Howling, Rémy Jacquier

Measurements and analysis of a radio-frequency planar antenna are presented for applications in inductively-coupled plasma processing. The network of inductive and capacitive elements exhibits high currents under resonance which are efficient for plasma generation. Mode frequencies and impedances are accurately calculated by accounting for the mutual partial inductances using the impedance matrix. The effect of plasma inductive coupling on mode frequency shift and mode impedance is estimated using the complex image method, giving good agreement with experiment. It is proposed that the complex image method combined with the partial inductance concept (see the accompanying paper, Part I (Howling et al 2015 Plasma Sources Sci. Technol. 24 065014)) offers a general way to calculate the impedance characteristics of inductively-coupled plasma sources in planar geometry.

Iop Publishing Ltd2015