Concept

Power semiconductor device

Related publications (388)

Energy-Efficient Frequency Selection Method for Bio-Signal Acquisition in AI/ML Wearables

David Atienza Alonso, Miguel Peon Quiros, José Angel Miranda Calero, Hossein Taji

In wearable sensors, energy efficiency is crucial, particularly during phases where devices are not processing, but rather acquiring biosignals for subsequent analysis. This study focuses on improving the power consumption of wearables during these acquisi ...

2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Mikhail Churaev, Xinru Ji, Zihan Li, Alisa Davydova, Junyin Zhang, Yang Chen, Xi Wang, Kai Huang

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Chengmin Li, Rui Lu, Heng Fang

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Protection unit for wide bandgap power switching device and method for operating the wide bandgap power switching device

Drazen Dujic, Chengmin Li

The invention relates to a method for operating a power switching device, particularly a wide bandgap power switching device, in a power application, particularly in a converter, comprising the steps of:- checking (S2) a transient voltage of or related to ...

2023

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Hongkeng Zhu, Armin Jafari, Palliyage Srilak Nirmana Perera

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

New York2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li, Rui Lu, Heng Fang

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Piscataway2023

Gate unit for a gate-commutated thyristor and integrated gate-commutated thyristor

Drazen Dujic, Jakub Kucka

The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); ...

2023

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO2 Spiking Neuron

Mihai Adrian Ionescu, Teodor Rosca

In this work, we investigate the intrinsic cycle-to-cycle variations in a spiking temperature-sensitive neuron, based on the resistive switching of a Vanadium dioxide (VO2) two-terminal device. We study how this phenomenon impacts the spike rate jitter, an ...

New York2023

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

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