Skip to main content

Search

Show all results for

Home

Person

Hongkeng Zhu

About
Privacy
Disclaimer

Copyright © 2025 EPFL, all rights reserved

Graph Chatbot

Official source

https://people.epfl.ch/hongkeng.zhu

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related publications (7)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

Related units (1)

Power and Wide-band-gap Electronics Research Laboratory

EPFL
STI
IEM
POWERLAB

Low‐Power Tunable Micro‐Plasma Device for Efficient and Scalable CO2 Valorization

Elison de Nazareth Matioli, Jeremy Luterbacher, Guang-Yu Sun, Hongkeng Zhu

Valorizing CO2 into chemical building blocks via efficient electrified processes could significantly decrease carbon emissions. In this work, a device that allows generation of tunable micro‐plasma modes (arc, pulsed, pulsed arc) on a chip for efficient, l ...

Wiley2025

Soft-Switching CO Hysteresis Losses in GaN HEMTs: A Resonant-Sawyer-Tower Measurement Method

Elison de Nazareth Matioli, Hongkeng Zhu

The inherent dissipated energy losses (Ediss) during the charging-discharging cycle of output capacitance (CO) in gallium nitride high-electron-mobility transistors (GaN HEMTs) limit their efficiency in soft-switching applications. Accurate characterizatio ...

Institute of Electrical and Electronics Engineers (IEEE)2024

Investigation of Dynamic RON in p-GaN Gate HEMTs under Steady-State Soft-Switching: Roles of OFF-State Trapping and Hole Injections

Elison de Nazareth Matioli, Hongkeng Zhu

Dynamic ON-resistance (RON) in GaN HEMTs is a critical issue for power electronics efficiency. This paper proposes a novel method to measure dynamic (RON) under long-term OFF-state drain-stress and steady-state soft-switching, comparing Schottky-type (GaN- ...

IEEE2025