Krypton difluoride, KrF2 is a chemical compound of krypton and fluorine. It was the first compound of krypton discovered. It is a volatile, colourless solid at room temperature. The structure of the KrF2 molecule is linear, with Kr−F distances of 188.9 pm. It reacts with strong Lewis acids to form salts of the KrF+ and KrF3+ cations.
The atomization energy of KrF2 (KrF2(g) → Kr(g) + F2(g)) is 21.9 kcal/mol, giving an average Kr–F bond energy of only 11 kcal/mol, the weakest of any isolable fluoride. In comparison, difluorine is held together by a bond of 36 kcal/mol. Consequently, KrF2 is a good source of the extremely reactive and oxidizing atomic fluorine. It is thermally unstable, with a decomposition rate of 10% per hour at room temperature. Krypton difluoride is endothermic, with a heat of formation of 14.4 ± 0.8 kcal/mol measured at 93 °C.
Krypton difluoride can be synthesized using many different methods including electrical discharge, photoionization, hot wire, and proton bombardment. The product can be stored at −78 °C without decomposition.
Electric discharge was the first method used to make krypton difluoride. It was also used in the only experiment ever reported to produce krypton tetrafluoride, although the identification of krypton tetrafluoride was later shown to be mistaken. The electrical discharge method involves having 1:1 to 2:1 mixtures of F2 to Kr at a pressure of 40 to 60 torr and then arcing large amounts of energy between it. Rates of almost 0.25 g/h can be achieved. The problem with this method is that it is unreliable with respect to yield.
Using proton bombardment for the production of KrF2 has a maximum production rate of about 1 g/h. This is achieved by bombarding mixtures of Kr and F2 with a proton beam operating at an energy level of 10 MeV and at a temperature of about 133 K. It is a fast method of producing relatively large amounts of KrF2, but requires a source of high-energy protons, which usually would come from a cyclotron.
The successful photochemical synthesis of krypton difluoride was first reported by Lucia V.
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The course introduces the basic concepts of thermodynamics and heat transfer, and thermodynamic properties of matter and their calculation. The students will master the concepts of heat, mass, and mom
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Provide the students with basic notions and tools for the modeling and analysis of dynamic systems. Show them how to design controllers and analyze the performance of controlled systems.
Fluorine is a chemical element with the symbol F and atomic number 9. It is the lightest halogen and exists at standard conditions as a highly toxic, pale yellow diatomic gas. As the most electronegative reactive element, it is extremely reactive, as it reacts with all other elements except for the light inert gases. Among the elements, fluorine ranks 24th in universal abundance and 13th in terrestrial abundance.
Xenon hexafluoride is a noble gas compound with the formula XeF6. It is one of the three binary fluorides of xenon that have been studied experimentally, the other two being XeF2 and XeF4. All known are exergonic and stable at normal temperatures. XeF6 is the strongest fluorinating agent of the series. It is a colorless solid that readily sublimes into intensely yellow vapors. Xenon hexafluoride can be prepared by heating of XeF2 at about 300 °C under 6 MPa (60 atmospheres) of fluorine.
Krypton (from κρυπτός 'the hidden one') is a chemical element with the symbol Kr and atomic number 36. It is a colorless, odorless, tasteless noble gas that occurs in trace amounts in the atmosphere and is often used with other rare gases in fluorescent lamps. Krypton is chemically inert. Krypton, like the other noble gases, is used in lighting and photography. Krypton light has many spectral lines, and krypton plasma is useful in bright, high-powered gas lasers (krypton ion and excimer lasers), each of which resonates and amplifies a single spectral line.
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Accelerating progress in the discovery and deployment of advanced nanoporous materials relies on chemical insight and structure-property relationships for rational design. Because of the complexity of this problem, trial-and-error is heavily involved in th ...
American Chemical Society2015
The project focuses on etching properties of the atomic layer deposition (ALD) of Al2O3. For this purpose, etching processes such as plasma etch with sulfur hexafluoride (SF6), gas etch with xenon difluoride (XeF2), wet etch with MIF developer (726 MIF) as ...