Concept

MESFET

Related publications (120)

Charge Collection Studies and Electrical Measurements of Heavily Irradiated 3D Double-Sided Sensors and Comparison to Planar Strip Detectors

Three-dimensional (3D) silicon detectors offer advantages over standard planar devices as more radiation hard sensors. These detectors and their applications in the upgrades of the LHC experiments are discussed. 3D detectors with a double-sided geometry ha ...

2011

Tunnel field-effect transistors as energy-efficient electronic switches

Mihai Adrian Ionescu, Heike Riel

Power dissipation is a fundamental problem for nanoelectronic circuits. Scaling the supply voltage reduces the energy needed for switching, but the field-effect transistors (FETs) in today's integrated circuits require at least 60 mV of gate voltage to inc ...

2011

An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs

Wladyslaw Grabinski, Antonios Bazigos, Matthias Bucher

The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to incon ...

2011

Graphene-based Field-effect Transistors

Adarsh Singh Sagar

With transistors set to reach their smallest possible size in the next decade, the silicon chip is likely to change dramatically, or be replaced entirely. The transistor industry's path which has been largely shaped by Gordon Moore's famous prediction that ...

EPFL2011

Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption

Mihai Adrian Ionescu, Andrea Lovera, Daniel Grogg, Sebastian Thimotee Bartsch

Nanoelectromechanical systems (NEMS) as integrated components for ultrasensitive sensing, time keeping, or radio frequency applications have driven the search for scalable nanomechanical transduction on-chip. Here, we present a hybrid silicon-on-Insulator ...

2011

Site-Specific Self-Assembled Liquid-Gated ZnO Nanowire Transistors for Sensing Applications

Klaus Kern, Kannan Balasubramanian, Vivek Pachauri

A scalable bottom-up solution-based approach for the site-specific realization of ZnO nanowire (ZnO-NW)-based field-effect transistors for sensing applications in liquids is reported. The nanowires are grown across pre-defined electrodes patterned by photo ...

2010

TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters

Stefano Michelis, Federico Faccio

TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radi ...

2010

Double-gate pentacene thin-film transistor with improved control in sub-threshold region

Jürgen Brugger, Mihai Adrian Ionescu, Andreea Veronica Savu, Dimitrios Tsamados, Katrin Sidler Arnet, Nenad Cvetkovic, Jyotshna Bhandari

In this work double-gate pentacene TFT architecture is proposed and experimentally investigated. The devices are fabricated on a polyimide substrate based on a process that combines three levels of stencil lithography with standard photolithography. Simila ...

Elsevier2010

Spatially Resolved Potential Distribution in Carbon Nanotube Cross-Junction Devices

Klaus Kern, Marko Burghard, Kannan Balasubramanian, Eduardo Jian Hua Lee

Crossed-nanotube junctions, the basic constituents of carbon nanotube networks, are investigated by scanning photocurrent microscopy. The location of the predominant electrostatic potential drop, at the electrical contacts or at the junction, is found to b ...

2009

Investigation of a contacting scheme for self-assembled cleaved edge overgrown InAs nanowires and quantum dot arrays

Anna Fontcuberta i Morral, Emanuele Uccelli

A contacting scheme to measure the transport properties into self-assembled InAs Quantum Wires (QWRs) or Quantum Dots (QDs) is presented. The nanostructures are formed on the (110) cleaved edge of a AlAs/AlGaAs heterostructure substrate by means of the Cle ...

2009

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