Publications related to Backlight

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Piscataway2024

Heralded Spectroscopy: a new single-particle probe for nanocrystal photophysics

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Samuel Burri, Arin Can Ülkü

Semiconductor nanocrystals feature multiply-excited states that display intriguing physics and significantly impact nanocrystal-based technologies. Fluorescence supplies a natural probe to investigate these states. Still, direct observation of multiexciton ...

SPIE-INT SOC OPTICAL ENGINEERING2023

Resolving the Controversy in Biexciton Binding Energy of Cesium Lead Halide Perovskite Nanocrystals through Heralded Single-Particle Spectroscopy

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Samuel Burri, Arin Can Ülkü

Understanding exciton-exciton interaction in multiply excited nanocrystals is crucial to their utilization as functional materials. Yet, for lead halide perovskite nanocryst-als, which are promising candidates for nanocrystal-based technologies, numerous c ...

AMER CHEMICAL SOC2021

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Nicolas Grandjean, Raphaël Butté, Johann Nicolaï Stachurski, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann, Kanako Shojiki

Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) ...

AMER CHEMICAL SOC2020

Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE

Nicolas Grandjean, Gordon Jens Callsen, Sebastian Pascal Tamariz Kaufmann

We present an overview on the growth and the optical properties of GaN quantum dots (QDs) embedded in planar AlN grown on the following three different types of substrates: single AlN crystal, AlN on sapphire, and AIN on Si(111). QD density control over th ...

IEEE2019

GaN Quantum Dots for Room Temperature Excitonic Physics

Sebastian Pascal Tamariz Kaufmann

Quantum dots (QDs) are the result of quantum confinement in the three spatial directions, as such they exhibit remarkable properties, of which the most important is perhaps the absence of a continuum of states. The allowed energetic levels are discrete, si ...

EPFL2019

Spatial coherence properties of an LED-based illumination system for mask-aligner lithography

Hans Peter Herzig, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi

A high-power LED-based illumination system has been developed as a replacement for the mercury arc lamps used in mask-aligner lithography. LEDs are arranged in a grid array and placed in the entrance aperture of individual reflectors. Those reflectors decr ...

SPIE2019

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman

A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 mu m is reported. The active region employs 20 layers of high-density Stranski-Krastanow InAs quantum dots on an InP substrate. The QD density and emission w ...

AMER INST PHYSICS2019

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Backlight

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Heralded Spectroscopy: a new single-particle probe for nanocrystal photophysics

Resolving the Controversy in Biexciton Binding Energy of Cesium Lead Halide Perovskite Nanocrystals through Heralded Single-Particle Spectroscopy

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Multi-User Precoder Designs for RGB Visible Light Communication Systems

Highly spatially resolved mapping of the piezoelectric potentials in InGaN quantum well structures by off-axis electron holography

Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE

GaN Quantum Dots for Room Temperature Excitonic Physics

Spatial coherence properties of an LED-based illumination system for mask-aligner lithography

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

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Chat with Graph Search

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Highly spatially resolved mapping of the piezoelectric potentials in InGaN quantum well structures by off-axis electron holography

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

InAs/InP quantum dot VECSEL emitting at 1.5 mu m

Heralded Spectroscopy: a new single-particle probe for nanocrystal photophysics

Multi-User Precoder Designs for RGB Visible Light Communication Systems

Resolving the Controversy in Biexciton Binding Energy of Cesium Lead Halide Perovskite Nanocrystals through Heralded Single-Particle Spectroscopy

Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE

GaN Quantum Dots for Room Temperature Excitonic Physics

Spatial coherence properties of an LED-based illumination system for mask-aligner lithography