Lecture

CMOS Inverter Fabrication

Description

This lecture covers the fabrication process of a CMOS inverter, starting with the creation of the n-well and the definition of the p-MOSFET and n-MOSFET. It then explains the steps for defining the polysilicon gate, pt diffusion, nt diffusion, contact holes, and metall connections. The lecture also delves into the thermal oxidation and doping processes involved in creating controlled conductivity zones. It further explores the techniques of diffusion and ion implantation, emphasizing their importance in modern CMOS fabrication processes. The lecture concludes with an overview of transferring patterns to the wafer surface, including the types of photoresists and printing methods used in the process.

About this result
This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.