Lecture
This lecture discusses recent results on electrostatic doping and carbon-based nano-electronics devices, focusing on the scaling of transistors, the impact of low density of states on device performance, and the potential of tunnel FETs. The instructor presents examples of dual gate carbon nanotube transistors and monolayer graphene devices, highlighting the importance of additional gates in improving device characteristics. The use of buried tri-gate structures for investigating carbon-based nanostructures and the potential of nano ribbon transistors are also explored, emphasizing the significance of low density of states in these materials for novel device concepts.