Modeling of MOS Transistor for Low-power Design

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Description

This lecture revisits the modeling of the MOS transistor for low-voltage and low-power analog circuit design, focusing on the EKV charge-based model. It discusses the industry standards, compact models, and challenges in analog/RF design. The lecture covers the long-channel static model, modes of operation, and the drain current expressions in different regions of operation.

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https://mediaspace.epfl.ch/media/0_tx8s73wf

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A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

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The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

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