This lecture covers the process of deep reactive ion etching using an inductively coupled plasma reactor, focusing on SF and C4F8 deposition, etch rates, and total etch time. It also discusses the Bosch process, selective dry etching, and the fabrication of high aspect ratio structures.
This video is available exclusively on Mediaspace for a restricted audience. Please log in to MediaSpace to access it if you have the necessary permissions.
Watch on Mediaspace