Didier Bouvet

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Related publications (58)

A BEAM PROFILE MONITOR FOR HIGH ENERGY PROTON BEAMS USING MICROFABRICATION TECHNIQUES

In High Energy Physics (HEP) experiments it is a common practice to expose electronic components and systems to particle beams, in order to assess their level of radiation tolerance and reliability when operating in a radiation environment. One of the faci ...

JACoW Publishing2020

Transient current technique for charged traps detection in silicon bonded interfaces

Jean-Michel Sallese, Didier Bouvet, Alessandro Mapelli

Wafer bonding is an established technology for the manufacturing of silicon-on-insulator (SOI) substrates, microelectromechanical systems (MEMS) and microfluidic devices. Low temperature direct bonding techniques can be of particular interest for the fabri ...

2019

Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

Jean-Michel Sallese, Didier Bouvet, Georgi Gorine, Federico Ravotti

The effects of extreme radiation levels on the electrical resistivity of metal thin films made of copper were studied by means of electrical measurements and post irradiation imaging. Different 3x3 mm(2) chips were produced by depositing 500 nm of meander ...

2019

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Antonios Bazigos, Sara Rigante, Elizabeth Buitrago Godinez, Paolo Scarbolo

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

Technological development of high-k dielectric FinFETs for liquid environment

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

This work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a systematic approach based on Finite Ele ...

Pergamon-Elsevier Science Ltd2014

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

In this work, highly scaled FinFETs (Fin Field Effect Transistors) are proposed as both sensing and circuit units of a lab-on-a-chip platform. The FinFET-based sensors with an HfO2 gate oxide demonstrate full pH-response with ΔVth ≈ 56 mV/pH. High readout ...

IEEE2014

Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape Devices

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

This work investigates a new method to measure mobility in nanowires. Based on a simple analytical approach and numerical simulations, we bring evidence that the traditional technique of Hall voltage measurement in low dimensional structures such as nanowi ...

Institute of Electrical and Electronics Engineers2014

Transient Off-Current in Junctionless FETs

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

We report preliminary measurements of transient drain current undershoot with time constants of the order of milliseconds in thick and highly doped n-type junctionless fieldeffect transistors. This effect might be attributed to a process involving generati ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Design Space of Twin Gate Junctionless Vertical Slit Field Effect Transistors

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

In this work, we present the technological constrains and limitations in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space involving the intrinsic off-current, the sub-threshold swing, and the drai ...

2013

Downscaling and Short Channel Effects in Twin Gate Junctionless Vertical Slit FETs

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

we present the performance constraints in the design of ultra-thin body Junctionless Vertical Slit Field Effect Transistor (JL VeSFET). A design space that take into account the intrinsic off-current, the sub-threshold swing and the drain induced barrier l ...

2013

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Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

Jean-Michel Sallese, Didier Bouvet, Georgi Gorine, Federico Ravotti

2019