Didier Bouvet

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Related publications (58)

Heavily Doped Junctionless Vertical Slit FETs with Slit Width Below 20 nm

Jean-Michel Sallese, Didier Bouvet, Farzan Jazaeri, Lucian Barbut

This paper reports an alternative simple fabrication process for twin gate junctionless Vertical Slit Field Effect Transistors. N-type devices have been successfully manufactured on SOI substrates with a doping density 5×1018 atoms/cm3. The devices demonst ...

2013

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

Mihai Adrian Ionescu, Didier Bouvet, Mohammad Najmzadeh

In this paper, we report formation of GAA buckled dual Si nanowire MOSFETs including two sub-80 nm Si cores on bulk Si using 0.8 mu m optical lithography and local oxidation for the first time. 0.833 GPa uniaxial tensile stress is measured in the buckled s ...

Elsevier Science Bv2013

High-k dielectric FinFETs towards Sensing Integrated Circuits

Mihai Adrian Ionescu, Didier Bouvet, Sara Rigante

This work presents a well-defined electronic device, namely a n-channel high-k dielectric FinFET (Fin Field Effect Transistor) as new label-free sensor for enhanced sensing integrated circuits. Metal gate FinFETs on bulk Si have been successfully electrica ...

IEEE2013

Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

Mihai Adrian Ionescu, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh

In this paper, we report for the first time making multi-gate buckled self-aligned dual Si nanowires including two sub-100 nm cross-section cores on bulk Si substrate using optical lithography, hard mask/spacer technology and local oxidation. 0.8 GPa uniax ...

Institute of Electrical and Electronics Engineers2012

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

Mihai Adrian Ionescu, Jean-Michel Sallese, Didier Bouvet, Wladyslaw Grabinski, Mohammad Najmzadeh

In this work we report dense arrays of accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-sections in a highly doped regime. The integration of local stressor technologies (both local oxidation and metal-gate strain) to achieve ⩾2.5 ...

Elsevier2012

Influence of chelating agents on the tribocorrosion of tungsten in sulphuric acid solution

Michel Declercq, Didier Bouvet, Stefano Mischler, Jelena Stojadinovic

The corrosion and tribocorrosion of tungsten in 0.01 M H2SO4, without and with the presence of lactic acid and phosphoric acid as chelating agents was studied here. ...

2011

Towards fabrication of Vertical Slit Field Effect Transistor (VeSFET) as new device for nano-scale CMOS technology

Jean-Michel Sallese, Didier Bouvet, Lucian Barbut

This paper proposes a CMOS based process for Vertical Slit Field Effect Transistors. The central part of the device, namely, the vertical slit, is defined by using electron beam lithography and silicon dry etching. In order to verify the validity and the r ...

IEEE2011

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

The performance of a standard MOSFET degrades with the increase in temperature, impacting the power consumption of the device. In this paper, we report the opposite trend, which is reflected in an improvement of main performance factors in ferroelectric FE ...

2011

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

Mihai Adrian Ionescu, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

Interest in Ferroelectric FETs originates from their potential as non-volatile memories and, more recently, as abrupt switches. In this work, we focus on the role of the Curie temperature of the gate stack on the performance of Fe-FETs. The proposed study ...

IEEE2010

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

Mihai Adrian Ionescu, Didier Bouvet, Luca De Michielis, Mohammad Najmzadeh

In this work we present for the first time correlation of lateral uniaxial tensile strain and I–V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to explo ...

Elsevier2010

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2011