Publications by Marcel Py | EPFL Graph Search

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We study the deep levels in InAlN nearly lattice-matched to GaN by photocapacitance spectroscopy. This technique allows the study of very deep levels having too slow thermal emission rates to be detected by other deep level spectroscopy techniques. We will ...

Amer Inst Physics2016

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

The capacitance-voltage-temperature characteristics of nonintentionally doped In0.16Al0.84 N/n+- GaN Schottky diodes were measured at 1 MHz and in the 90–400 K range. They are discussed in the framework of existing theories, which properly treat the Poiss ...

American Institute of Physics2015

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominate ...

Amer Physical Soc2014

Leakage mechanisms in InAlN based heterostructures

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We propose a model for leakage currents in Schottky contacts on InAlN/GaN heterostructures based on two distinct tunneling mechanisms. Our modeling relies on structural parameters, in particular, InAlN dielectric constant, interface polarization charges an ...

Amer Inst Physics2014

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

Nicolas Grandjean, Jean-François Carlin, Marcel Py, Lorenzo Lugani

We investigate the thermal stability of nearly lattice-matched InAlN layers under metal organic vapor phase epitaxy conditions for temperatures >800 degrees C and show that they are not fully stable. In particular, InAlN top layers undergo degradation duri ...

Amer Inst Physics2014

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Nicolas Grandjean, Jean-François Carlin, Denis Martin, Lorenzo Lugani, Marcel Py

We report on InAlN/GaN high electron mobility transistors (HEMTs) grown by metal organic vapor phase epitaxy on sapphire with ultrathin buffers. Two dimensional electron gas (2DEG) exhibiting high mobility (1100 cm(2) /V s) and low sheet resistivity (356 O ...

Amer Inst Physics2013

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

American Institute of Physics2011

High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate

Nicolas Grandjean, Marco Malinverni, Pierre Stadelmann, Denis Martin, Anas Mouti, Marcel Py, Marcus Gonschorek

High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...

2010

Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek

Cambridge, Cambridge University Press2010

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py, Marcus Gonschorek, Dobri Simeonov

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

2009