Publications by Jean-Michel Sallese

Cover Picture: Materials and Corrosion. 1/2025

Jean-Michel Sallese, Stefano Mischler, Christian Leinenbach, Anna Neus Igual Muñoz

Wiley2025

Corrosion Behavior of Heat-Treated Fe-Based Shape Memory Alloys

Jean-Michel Sallese, Stefano Mischler, Anna Neus Igual Muñoz

The influence of various heat treatments on the corrosion behavior of a novel iron-based shape memory alloy (Fe-SMA), Fe-17Mn-6Si-10Cr-4Ni-1(V,C), used as prestressing elements in civil engineering was examined through electrochemical corrosion methods. SM ...

2025

Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

Nanowire field-effect transistor (NW FET) biosensors are known to be highly sensitive devices that can detect extremely low concentrations of biomolecules. In this article, we present an analytical model alongside with numerical simulations to calculate th ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2025

High-rate, high-resolution single photon X-ray imaging: Medipix4, a large 4-side buttable pixel readout chip with high granularity and spectroscopic capabilities

Jean-Michel Sallese, Adil Koukab, Viros Sriskaran

The Medipix4 chip is the latest member in the Medipix/Timepix family of hybrid pixel detector chips aimed at high -rate spectroscopic X-ray imaging using high -Z materials. It can be tiled on all 4 sides making it ideal for constructing large -area detecto ...

Iop Publishing Ltd2024

Nanowire junctionless ISFET noise model in Verilog-A

Jean-Michel Sallese, Ashkhen Yesayan

In this paper, we validate the Verilog-A implementation of the nanowire ISFET model. Based on the developed code and EKV formalism, the flicker noise of the nanowire ISFET was studied. The Verilog-A code was validated by comparing the data obtained from th ...

2024

Detachable and Portable Moisture Sensors for Industrial Applications

Jean-Michel Sallese

This paper presents the design, fabrication and testing of an innovative moisture analyzer with a detachable and portable moisture sensor, which can compensate for both bulk density and temperature effects, thus allowing to detect the moisture content in g ...

Institute of Electrical and Electronics Engineers2024

Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Jean-Michel Sallese, Adil Koukab

The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluence ...

2024

Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

Jean-Michel Sallese, Adil Koukab, Gennaro Termo

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon -On -Insulator (FDSOI) technology exposed to ultra -high total ionizing dose (TID) was investigated. Custom structures including n- and p -channel devices with different sizes and ...

Iop Publishing Ltd2024

Simplified EPFL HEMT Model

Jean-Michel Sallese, Farzan Jazaeri, Ashkhen Yesayan

This paper introduces a simplified and design-oriented version of the EPFL HEMT model [1], focusing on the normalized transconductance-to-current characteristic (Gm/ID). Relying on these figures, insights into GaN HEMT modeling in relation to technology of ...

IEEE Computer Society2024

Non Quasi-Static Model of DG Junctionless FETs

Jean-Michel Sallese, Farzan Jazaeri

In this paper an analytical non-quasi-static (NQS) model for long-channel symmetric double-gate junctionless field-effect transistors (JLFETs) operating in depletion mode is proposed for the first time. The model addresses the limitations of existing DC an ...

2024