Gatien Cosendey

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Related publications (17)

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Nicolas Grandjean, Gatien Cosendey, Ehsan Hashemi

Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, and is sometimes neglected to simplify the numerical simulations. However, in contrast to outcoupling and absorption losses, we show that the lateral loss c ...

Optical Soc Amer2014

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gatien Cosendey

Thanks to its high refractive index contrast, band gap, and polarization mismatch compared to GaN, In0.17Al0.83N layers lattice-matched to GaN are an attractive solution for applications such as distributed Bragg reflectors, ultraviolet light-emitting diod ...

Amer Inst Physics2013

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

Amer Inst Physics2013

(In,Al)N-based blue microcavity lasers

Gatien Cosendey

EPFL2013

Engineering the Lateral Optical Guiding in Gallium Nitride-Based Vertical-Cavity Surface-Emitting Laser Cavities to Reach the Lowest Threshold Gain

Nicolas Grandjean, Gatien Cosendey, Ehsan Hashemi

In order to improve the current injection in GaN-based blue vertical-cavity surface-emitting lasers (VCSELs) a dielectric aperture is generally used in combination with an indium-tin-oxide (ITO) layer on the top intracavity p-contact layer. The most straig ...

Iop Publishing Ltd2013

Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia, Gatien Cosendey, Georg Rossbach

We report on III-nitride based blue vertical cavity surface emitting lasers using defect-free highly reflective AlInN/GaN distributed Bragg reflectors grown on c-plane free-standing GaN substrates. Lasing is demonstrated at room temperature under pulsed el ...

American Institute of Physics2012

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

Nicolas Grandjean, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser, Munise Nevin Cobet

The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite semiconductors, allows the coexistence of two different light-matter coupling regimes along orth ...

Amer Physical Soc2012

Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Gatien Cosendey, Nils Asmus Kristian Kaufmann

We report on the growth conditions of AlInN layers grown on free-standing GaN substrates. We found that an average indium content of similar to 20% is needed to obtain defect-free AlInN/GaN multilayers. This is larger than the commonly accepted value of 18 ...

AIP American Institute of Physics2011

Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells

Nicolas Grandjean, Raphaël Butté, Jacques Levrat, Gatien Cosendey, Georg Rossbach, Marlene Glauser, Munise Nevin Cobet

We present a comprehensive study of the anisotropic optical properties of nonpolar GaN/AlGaN multiple quantum wells intentionally designed to act as an active region of a planar microcavity operating in the strong-coupling regime. The strain induced by the ...

2011

High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the characteristics of blue superluminescent light emitting diodes based on the emission of InGaN quantum wells. Narrow ridge-waveguide devices realized by standard processing techniques and with extremely low facet reflectivity show single la ...

2010

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