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Optically pumped InGaN/GaN quantum well vertical-external-cavity surface-emitting laser emitting at 420 nm has been realized. Lasing at external cavity lengths of up to 50 mm is demonstrated, making integration of practical sized intracavity elements possible. Spectral and beam profile measurements indicate best operation conditions in a semiconfocal cavity configuration. Lasing threshold of 20.9 W is achieved for a 49 mm long cavity with output beam quality parameter M-2 not exceeding 1.1. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757758]
Elyahou Kapon, Grigore Suruceanu, Alexandru Mereuta, Andrei Caliman, Nicolas Chevalier
Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Salvatore Pes
Tobias Kippenberg, Andrey Voloshin, Junqiu Liu, Maxim Karpov, Hairun Guo, Erwan Guillaume Albert Lucas, Arslan Sajid Raja, John David Jost