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Nicolas Grandjean

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Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz

Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

In-Plane Polarities of Nonpolar Wurtzite Epitaxial Films Deposited on m- and r-plane Sapphire Substrates

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots