Skip to main content

Search

Show all results for

Home

Person

Marco Rossetti

About
Privacy
Disclaimer

Copyright © 2025 EPFL, all rights reserved

Graph Chatbot

About this result

This page is automatically generated and may contain information that is not correct, complete, up-to-date, or relevant to your search query. The same applies to every other page on this website. Please make sure to verify the information with EPFL's official sources.

Related units (1)

CMI - Administration

EPFL
VPA-AVP-CP
CMI
CMI-GE

Related publications (10)

Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Marco Malinverni, Jean-Michel Jacques Lamy, Marco Rossetti, Lise Lahourcade, Denis Martin

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Camille Haller, Denis Martin

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016