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Please note that this is not a complete list of this person’s publications. It includes only semantically relevant works. For a full list, please refer to Infoscience.
This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...
Institute of Electrical and Electronics Engineers2017
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The main characteristics of Hall Effect Sensors, based on "silicon-on-insulator" (SOI) structure in the ideal design features, are evaluated by performing three-dimensional physical simulations. A particular Hall shape reproducing an XFAB SOI XI10 integrat ...
Elsevier2014
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This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release ...