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Marcus Gonschorek

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Marcus Gonschorek

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Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03

Effect of fluoride plasma treatment on InAlN/GaN HEMTs

Barrier-layer scaling of InAlN/GaN HEMTs

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Gate-lag and drain-lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures