Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched (LM) on fully relaxed GaN templates for an indium content of similar to 17.5%, i.e., it can be grown either tensely or compressively on GaN. The effect of strain on the polarization induced sheet charge density at the Al1-xInxN/AlN/GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick AlN interlayer. The barrier indium content ranges at 0.03
Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar
Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh
Elison de Nazareth Matioli, Luca Nela