Publications by Livio Lattanzio

Semiconductor tunneling device

Mihai Adrian Ionescu, Cem Alper, Luca De Michielis, Livio Lattanzio, Nilay Dagtekin

The present invention concerns a semiconductor tunneling Field-Effect device including a source, a drain, at least one elongated semiconductor structure extending in an elongated direction, a first gate, and a second gate. The first gate has a length exten ...

2016

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of the Schrodinger and Poisson equations, using the Finite Element Method followed by tunneling current (direct and phonon assisted) calculation in post-processing. ...

Elsevier2015

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

Mihai Adrian Ionescu, Cem Alper, Livio Lattanzio, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schrodinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applie ...

IEEE2014

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Cem Alper, Livio Lattanzio, Pierpaolo Palestri, Luca Selmi

The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of cur ...

Ieee-Inst Electrical Electronics Engineers Inc2013

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Luca De Michielis, Livio Lattanzio, Heike Riel

In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typic ...

Institute of Electrical and Electronics Engineers2013

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Arnab Biswas, Nilay Dagtekin, Luca Selmi, Heike Riel

In this paper, an analytical band-to-band tunneling model is proposed, validated by means of drift-diffusion simulation and comparison with experimental data, implemented in Verilog-A, and finally proven with SPICE simulator through simulation of circuits ...

American Institute of Physics2013

Innovative Tunnel Field-Effect Transistor Architectures

Livio Lattanzio

EPFL2013

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Nilay Dagtekin

Tunnel FETs (TFETs) are being intensively investigated for their potential in achieving subthermal switching slopes and extremely low leakage currents. Recently, a promising concept has been proposed: the electron-hole bilayer TFET (EHBTFET), which exploit ...

Ieee-Inst Electrical Electronics Engineers Inc2012

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Mihai Adrian Ionescu, Luca De Michielis, Cem Alper, Livio Lattanzio, Nilay Dagtekin

IEEE2012

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012