Publications by Anna Fontcuberta i Morral

Data set for control of Ge island coalescence for the formation of nanowires on silicon.

Anna Fontcuberta i Morral, Alok Rudra, Santhanu Panikar Ramanandan, Joel René Sapera, Vladimir Dubrovskii, Sara Marti Sanchez

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

EPFL Infoscience2024

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

Anna Fontcuberta i Morral, Nicholas Paul Morgan, Heera Menon

Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known ...

ROYAL SOC CHEMISTRY2023

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Andrea Giunto, Santhanu Panikar Ramanandan, Mirjana Dimitrievska, Iléane Tiphaine Françoise Marie Lefevre

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

IOP Publishing Ltd2023

The 2022 applied physics by pioneering women: a roadmap

Anna Fontcuberta i Morral, Hui Dong, Hyunjung Kim

Women have made significant contributions to applied physics research and development, and their participation is vital to continued progress. Recognizing these contributions is important for encouraging increased involvement and creating an equitable envi ...

IOP Publishing Ltd2023

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Anna Fontcuberta i Morral, Alok Rudra, Didem Dede, Valerio Piazza, Vladimir Dubrovskii, Nicholas Paul Morgan, Marie Sophie Sanglé-Ferrière, Ann-Kristin Stief

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. Selective area epitaxy at the nanoscale enables fabricationofhigh-quality nanostructures in regular arrays wi ...

AMER CHEMICAL SOC2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Nicholas Paul Morgan

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Anna Fontcuberta i Morral, Andrea Giunto, Thomas Hagger, Louise Emma Webb

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Santhanu Panikar Ramanandan, Mischa Samuel Flór, Diego Armando Sandoval Salaiza, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Mirjana Dimitrievska, Maria Chiara Spadaro

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

2022

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Anna Fontcuberta i Morral, Lucas Güniat, Didem Dede, Valerio Piazza, Elif Nur Dayi, Martin George Friedl, Vladimir Dubrovskii, Nicholas Paul Morgan, Akshay Balgarkashi

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

IOP Publishing Ltd2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Didem Dede, Valerio Piazza, Raphaël François Lemerle, Jean-Baptiste Leran, Wonjong Kim, Nicolas Tappy, Nicholas Paul Morgan, Akshay Balgarkashi, Titouan Charvin

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

AMER CHEMICAL SOC2022

Anna Fontcuberta i Morral

Data set for control of Ge island coalescence for the formation of nanowires on silicon.

Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

The 2022 applied physics by pioneering women: a roadmap

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

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Monolithic InSb nanostructure photodetectors on Si using rapid melt growth

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Data set for control of Ge island coalescence for the formation of nanowires on silicon.

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

The 2022 applied physics by pioneering women: a roadmap

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy