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Tomas Sluka

Related publications (26)

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The charged domain wall is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall. In contrast to hetero-interfaces between different ...

2018

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Conductive domain walls (DWs) in ferroic oxides as device elements are a highly attractive research topic because of their robust and agile response to electric field. Charged DWs possessing metallic-type conductivity hold the highest promises in this aspe ...

Amer Chemical Soc2017

Static negative capacitance of a ferroelectric nano-domain nucleus

Nava Setter, Tomas Sluka, Pavel Mokry

Miniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could b ...

Amer Inst Physics2017

It is known that the permittivity of ferroelectric polydomain films and single crystals in weak electric fields is strongly enhanced by the reversible movement of pinned domain walls. Two mechanisms of the movement exist: first, the bending of free segment ...

Amer Inst Physics2017

Charge screening strategy for domain pattern control in nano-scale ferroelectric systems

Nava Setter, Tomas Sluka

Strain engineering is a widespread strategy used to enhance performance of devices based on semiconductor thin films. In ferroelectrics strain engineering is used to control the domain pattern: When an epitaxial film is biaxially compressed, e.g. due to la ...

2017

Identification of defect distribution at ferroelectric domain walls from evolution of nonlinear dielectric response during the aging process

Tomas Sluka, Pavel Mokry

The motion of ferroelectric domain walls greatly contributes to the macroscopic dielectric and piezoelectric response of ferroelectric materials. The domain-wall motion through the ferroelectric material is, however, hindered by pinning on crystal defects, ...

Amer Physical Soc2016

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Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged ...

Nature Publishing Group2016

Piezoelectric enhancement under negative pressure

Nava Setter, Alexander Tagantsev, Tomas Sluka, Alexander Kvasov, Silviu Cosmin Sandu, Jin Wang

Enhancement of ferroelectric properties, both spontaneous polarization and Curie temperature under negative pressure had been predicted in the past from first principles and recently confirmed experimentally. In contrast, piezoelectric properties are expec ...

Nature Publishing Group2016

Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification

Nava Setter, Alexander Tagantsev, Tomas Sluka, Petr Yudin, Ludwig Feigl

The velocity of individual 1800 domain walls in thin ferroelectric films of PbZr0.1Ti0.9O3 is strongly dependent on the thickness of the top Pt electrode made by electron-beam induced deposition (EBID). We show that when the thickness is varied in the rang ...

Amer Chemical Soc2016

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Charged domain walls in ferroelectrics are movable and electronically conducting interfaces inside insulating materials. A simple and reliable method for their artificial production with ultraviolet (UV) light is described. The UV illumination produces fre ...

Wiley-Blackwell2016