Publications by Mathieu Gérard Boccard

Synergetic substrate and additive engineering for over 30%-efficient perovskite-Si tandem solar cells

Christophe Ballif, Quentin Thomas Jeangros, Mounir Driss Mensi, Christian Michael Wolff, Daniel Anthony Jacobs, Deniz Türkay, Kerem Artuk, Mathieu Gérard Boccard, Xin Yu Chin

Perovskite-silicon (Si) tandem solar cells are the most prominent contenders to succeed single-junction Si cells that dominate the market today. Yet, to justify the added cost of inserting a perovskite cell on top of Si, these devices should first exhibit ...

2024

Loss Analysis of a 24.4%-Efficient Front-Junction Silicon Heterojunction Solar Cell and Opportunity for Localized Contacts

Christophe Ballif, Deniz Türkay, Mathieu Gérard Boccard, Luca Massimiliano Antognini, Jean Cattin, Julie Amandine Dreon, Vincent Philippe Paratte

Silicon heterojunction (SHJ) solar cells have recently reached power conversion efficiencies above 25% with various device architectures and with industrial size (>200 cm(2)) wafers. Yet, for an accurate assessment of the efficiency potential and further d ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Carrier-selective contacts using metal compounds for crystalline silicon solar cells

Mathieu Gérard Boccard, Julie Amandine Dreon

Solar cells rely on the efficient generation of electrons and holes and the subsequent collection of these photoexcited charge carriers at spatially separated electrodes. High wafer quality is now commonplace for crystalline silicon (c-Si) based solar cell ...

WILEY2023

Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cells

Christophe Ballif, Quentin Thomas Jeangros, Mounir Driss Mensi, Christian Michael Wolff, Daniel Anthony Jacobs, Deniz Türkay, Kerem Artuk, Mathieu Gérard Boccard, Peter Joseph Fiala, Quentin Jean-Marie Armand Guesnay

Silicon solar cells are approaching their theoretical efficiency limit of 29%. This limitation can be exceeded with advanced device architectures, where two or more solar cells are stacked to improve the harvesting of solar energy. In this work, we devise ...

American Association for the Advancement of Science2023

Bandgap engineering of indium gallium nitride layers grown by plasma-enhanced chemical vapor deposition

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Nicolas Würsch, Mathieu Gérard Boccard, Jonathan Emanuel Thomet

This paper reports on the fabrication of In xGa 1 - xN (InGaN) layers with various compositions ranging from InN to GaN using a cost-effective low-temperature plasma-enhanced chemical vapor deposition (PECVD) method and analyzes the influence of deposition ...

2022

Monocrystalline 1.7-eV MgCdTe solar cells

Mathieu Gérard Boccard

Monocrystalline 1.7 eV Mg0.13Cd0.87Te/MgxCd1-xTe (x > 0.13) double heterostructure (DH) solar cells with varying Mg compositions in the barrier layers are grown by molecular beam epitaxy. A Mg0.13Cd0.87Te/Mg0.37Cd0.63Te DH solar cell featuring abrupt inter ...

AIP Publishing2022

Status and perspectives of crystalline silicon photovoltaics in research and industry

Christophe Ballif, Franz-Josef Haug, Mathieu Gérard Boccard

Crystalline silicon (c-Si) photovoltaics has long been considered energy intensive and costly. Over the past decades, spectacular improvements along the manufacturing chain have made c-Si a low-cost source of electricity that can no longer be ignored. Over ...

2022

Integration of thin n-type nc-Si:H layers in the window-multilayer stack of heterojunction solar cells

Christophe Ballif, Mathieu Gérard Boccard, Laurie-Lou Senaud, Luca Massimiliano Antognini, Julie Amandine Dreon, Vincent Philippe Paratte, Corentin Yann Sthioul

N-type nanocrystalline silicon (nc-Si:H(n)) layers are good candidates to improve current and transport properties in heterojunction solar cells. In this work, we perform thickness series alongside PH3 doping series to unravel the desirable characteristics ...

ELSEVIER2022

Contact Resistivity Measurements and their Applicability for Accurate Series Resistance Breakdown in Heterojunction Solar Cell

Christophe Ballif, Bertrand Yves Paul Paviet-Salomon, Laurie-Lou Senaud, Deniz Türkay, Matthieu Despeisse, Mathieu Gérard Boccard, Lison Sylou Marthey, Luca Massimiliano Antognini, Julie Amandine Dreon

In this work, we use several approaches to perform accurate Series Resistance (R-S) breakdown of a state of the art 2 cm x 2 cm screen-printed solar cell reaching 82.5% FF. On the one hand, Haschke et al.'s model for the lateral transport through the cell, ...

AMER INST PHYSICS2022

New metric for carrier selective contacts for silicon heterojunction solar cells

Mathieu Gérard Boccard, Jakub Holovsky

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

PERGAMON-ELSEVIER SCIENCE LTD2022