Publications by Antonios Bazigos

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) in dual-gated graphene field effect transistors (GFETs) at room temperature for various channel lengths, ranging from 200 nm to 5 mu m. The GFETs were fabric ...

Amer Chemical Soc2015

Compact modeling of DG-Tunnel FET for Verilog-A implementation

Mihai Adrian Ionescu, Antonios Bazigos, Luca De Michielis, Arnab Biswas

In this work, a compact model based on an analytical closed form solution of the 1D Poisson's equation for a double-gate Tunnel FET is derived. Furthermore, the current levels are estimated by implementing an algorithm based on the Kane's band-to-band tunn ...

IEEE2015

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Institute of Electrical and Electronics Engineers2015

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

2015

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Antonios Bazigos, Sara Rigante, Elizabeth Buitrago Godinez, Paolo Scarbolo

Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...

Amer Chemical Soc2015

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

IEEE2015

FOSS EKV 2.6 parameter extractor

Jean-Michel Sallese, Farzan Jazaeri, Wladyslaw Grabinski, Antonios Bazigos, Anurag Mangla, Maria-Anna Chalkiadaki

The design of advanced integrated circuits (IC) in particular for low power analog and radio-frequency (RF) application becomes more complex as the device level modeling confronting challenges in micro- and nano-meter CMOS processes. As present CMOS techno ...

Ieee2015

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Antonios Bazigos, Daniel Grogg, Yu Pu

Nowadays, electronics face a challenge regarding the power consumption of integrated circuits (ICs). There is a need for new devices that can provide improved switching capabilities. The downscaled electrostatically actuated ohmic switch, as a (re)emerging ...

Ieee-Inst Electrical Electronics Engineers Inc2014

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

Mihai Adrian Ionescu, Andreas Schueler, Antonios Bazigos, Wladyslaw Grabinski, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Antonio Paone

IEEE2014

Energy and Latency Optimization in NEM Relay-Based Digital Circuits

Mihai Adrian Ionescu, Antonios Bazigos, Daniel Grogg

Digital circuits based on nanoelectromechanical (NEM) relays hold out the potential of providing an energy efficiency unachievable by conventional CMOS technology. This paper presents a detailed analysis of the operating characteristics of fabricated curve ...

Ieee-Inst Electrical Electronics Engineers Inc2014