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Lorenzo Lugani

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Lorenzo Lugani

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W-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Photocapacitance spectroscopy of InAlN nearly lattice-matched to GaN

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

Capacitance behavior of InAlN Schottky diodes in presence of large concentrations of shallow and deep states related to oxygen

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Leakage mechanisms in InAlN based heterostructures

Thermal stability and in situ SiN passivation of InAlN/GaN high electron mobility heterostructures

n(+)-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 degrees C) Electronics