Publication

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Abstract

Nonintentionally doped 200-nm-thick In0.16Al0.84N/n(+)-GaN samples were grown by metal-organic vapor phase epitaxy and used for the electrical characterization of InAlN. In the temperature range 180-400 K, the forward current of Schottky diodes is dominated by a tunneling mechanism below 1.2 V. Capacitance and conductance-temperature characteristics were measured at 1 MHz in the 90-400 K range and at various voltages. The conductance vs temperature reveals two peaks D-1 and D-2, which are attributed to bulk states in InAlN. Their characterization by admittance spectroscopy gives thermal activation energies of approximate to 68 meV and 290 meV, and thermal capture cross section of 9.7 x 10(-17) cm(2) and approximate to 6.2 x 10(-15) cm(2), respectively. The same levels are also revealed by extracting the temperature dependence of the carrier density in the neutral region of InAlN from I-V-T characteristics on the Schottky diode. A partial carrier freeze out is demonstrated and discussed in the framework of an existing theory for DX centers. The use of this approach is supported by the evidence of persistent photoconductivity effects, which strongly indicate the presence of DX centers in our material. It results that each donor in InAlN would exist in two distinct lattice configurations, a substitutional one (D-1, hydrogenic state) and a lattice-distorted one (D-2, DX state). From secondary ion mass spectrometry data, theoretical grounds, and previous experimental evidence in the AlxGa1-xN system, oxygen is the most probable candidate for such an unintentional dopant.

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Related concepts (32)
Schottky diode
The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action. The cat's-whisker detectors used in the early days of wireless and metal rectifiers used in early power applications can be considered primitive Schottky diodes. When sufficient forward voltage is applied, a current flows in the forward direction.
Diode
A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance). It has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. A semiconductor diode, the most commonly used type today, is a crystalline piece of semiconductor material with a p–n junction connected to two electrical terminals. It has an exponential current–voltage characteristic. Semiconductor diodes were the first semiconductor electronic devices.
Doping (semiconductor)
In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.
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