Publications by Elmira Shahrabi

Performance improvement of chip-level CMOS-integrated ReRAM cells through material optimization

Elmira Shahrabi, Thomas La Grange, Yusuf Leblebici, Tugba Demirci

The integration of the resistive random access memory (ReRAM) with CMOS logic circuitry provides a solution to scaling limitations, and offers promising candidates for use in next generation computing applications. It is challenging to realize a reliable, ...

ELSEVIER SCIENCE BV2019

ReRAM From Material Study to CMOS Co-integration

Elmira Shahrabi

The revolution of information-technology owes to silicon-based complementary-metal-oxide (CMOS) technology. However, CMOS technology approaches its physical limitation hardening the further progress of memory devices as well as computing paradigm requiring ...

EPFL2019

Multi-ReRAM synapses for artificial neural network training

Elmira Shahrabi, Igor Krawczuk, Yusuf Leblebici, Irem Boybat Kara, Carlo Ricciardi, Cecilia Giovinazzo, Evangelos Eleftheriou, Abu Sebastian

Metal-oxide-based resistive memory devices (ReRAM) are being actively researched as synaptic elements of neuromorphic co-processors for training deep neural networks (DNNs). However, device-level non-idealities are posing significant challenges. In this wo ...

IEEE2019

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Carlo Ricciardi, Cecilia Giovinazzo, Oguz Tolga Celik

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse behavior. ...

AMER CHEMICAL SOC2019

The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Cecilia Giovinazzo

In this article, we inspected the bipolar resistive switching behavior of W-based ReRAMs, using HfO2 as switching layer. We have shown that the switching properties can be significantly enhanced by incorporating an Al2O3 layer as a barrier layer. It stabil ...

IEEE2018

Nanoscale topographical control of capillary assembly of nanoparticles

Jürgen Brugger, Olivier Martin, Duncan Thomas Lindsay Alexander, Massimo Mastrangeli, Elmira Shahrabi, Jérémy Butet, Valentin Flauraud, Gabriel David Bernasconi

Predetermined and selective placement of nanoparticles onto large-area substrates with nanometre-scale precision is essential to harness the unique properties of nanoparticle assemblies, in particular for functional optical and electro-optical nanodevices. ...

2017

Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

Recently, studies on ReRAMs and their reliability have received increased attention. The reliability issue is due to the nature of oxygen vacancies behaviour under biasing conditions which necessitate further studies to achieve an in-depth understanding. I ...

2017

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Elmira Shahrabi, Igor Krawczuk, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfOx/TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti buffer lay ...

Ieee2016

Chip-Level CMOS Co-Integration of ReRAM-Based Non-Volatile Memories

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Tugba Demirci, Mahmoud Hadad, Behnoush Attarimashalkoubeh

This work reports a technique to fabricate ReRAM crossbar arrays co-integrated with fully finished 180 nm CMOS technology chips. The proposed integration method enables low- cost ReRAM-CMOS integration and allows the rapid prototyping of complete memory sy ...

Ieee2016

Effect of Hf Metal Layer on the Switching Characteristic of HfOX-based Resistive Random Access Memory

Elmira Shahrabi, Yusuf Leblebici, Jury Sandrini, Behnoush Attarimashalkoubeh, Marios Barlas

In this study, we propose the insertion of an ultrathin Hf layer at the interface between TiN (top electrode) and HfOX (electrolyte), and then studied its effect on the device electrical properties. In order to obtain the desired switching characteristics, ...

Ieee2016