Unit
Power and Wide-band-gap Electronics Research Laboratory
LaboratorySummary
The Laboratory of Power Semiconductor Devices (POWERlab) at EPFL focuses on innovating semiconductor devices through nanoscale design of high-performance materials to create new, highly efficient devices that surpass current technology. Their research includes developing on-chip all-electronic nanoplasma devices for ultra-fast switching of high-power electric signals, as well as exploring electronic metadevices for terahertz applications. Additionally, they investigate novel aspects of devices and materials using RF techniques and fast electronic measurements, such as the properties of Vanadium Dioxide for data storage and processing.
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Related publications (567)
Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao
In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...
2024A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs
Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...
2024Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs
The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...
2024