Publications by Taifang Wang | EPFL Graph Search

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Multi-channel nanowire devices for efficient power conversion

Elison de Nazareth Matioli, Vasiliki Tileli, Jun Ma, Luca Nela, Catherine Erine, Tzu-Hsien Shen, Taifang Wang

Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...

2021

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Taifang Wang, Mohammad Samizadeh Nikooytabalvandani

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

p-NiO junction termination extensions for GaN power devices

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Taifang Wang, Alessandro Floriduz

We report the demonstration of p-NiO layers as junction termination extensions (JTEs) for realizing high-performance GaN power devices. The p-NiO was deposited by RF sputtering, a flexible process which enables to achieve high hole densities. In this work, ...

IOP PUBLISHING LTD2021

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Luca Nela, Riyaz Mohammed Abdul Khadar, Catherine Erine, Taifang Wang, Alessandro Floriduz, Pirouz Sohi, Reza Soleiman Zadeh Ardebili

In this paper, we illustrate the use of RF-sputtered p-NiO to fabricate Junction Termination Extensions (JTEs) for high-performance vertical GaN-on-Si Schottky Barrier Diodes (SBDs). The GaN epitaxial structures were grown on 6-inch Si wafers by MOCVD. The ...

IEEE2021

Novel Slanted Field Plate Technology for GaN HEMTs by Grayscale Lithography on Flowable Oxide

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Taifang Wang

We report a novel process to achieve slanted field plate (S-FP), which is a field plate with a gradual increase thickness from gate edge towards drain - utilizing grayscale lithography on flowable oxide (FOX) in single process step, in which developed FOX ...

IEEE2019

Impact of Fin Width on Tri-Gate GaN MOSHEMTs

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Giovanni Santoruvo, Taifang Wang

In this paper, we present a detailed investigation of the impact of fin width (w(fin)) on tri-gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs). As w(fin) is reduced, the threshold voltage (V-TH) increases, which is due ...

2019

1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes

Elison de Nazareth Matioli, Jun Ma, Taifang Wang

Institute of Electrical and Electronics Engineers2018