Publications by Myung Jae Lee | EPFL Graph Search

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

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(8

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

Light detection and ranging (LiDAR) systems based on direct time-of-flight (DTOF) are used in spacecraft navigation, assembly-line robotics, augmented and virtual reality (AR/VR), (drone-based) surveillance, advanced driver assistance systems (ADAS), and a ...

2018

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Single-photon detection and photon counting are useful tools in many fields, from light detection and ranging (LiDAR) to biomedical imaging and from time-resolved Raman spectroscopy to quantum applications. In this context, recently, single-photon avalanch ...

IOP PUBLISHING LTD2018

Optocoupling in CMOS

Edoardo Charbon, Myung Jae Lee

For on-chip data communication with galvanic isolation, a monolithically integrated optocoupler is strongly desired. For this purpose, silicon (Si) avalanche mode LEDs (AMLEDs) offer a great potential. However such AMLEDs have a relatively low internal qua ...

IEEE2018

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P + /Deep N-well junction with a circular shape, for whi ...

2018

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We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm 2 , a maximum photon detection probability of 31.8% at 600nm, over 5% in the 420-920 ...

2018

CMOS-Based Single-Photon Detectors: Technology and Applications

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

The goal of this paper is to introduce CMOS-based single-photon detectors in terms of technology and applications. We cover background and recent progress on the detectors and describe emerging applications based on the technology. ...

IEEE2018

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3Dstacked CMOS SPAD based image sensors hold the promise for better sensitivity and more functionality per pixel. The technology enables to separate detection from computation onto different chips, or tiers, that are stacked onto one another. One advantage ...

IEEE2018

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

Edoardo Charbon, Myung Jae Lee, Qi Guo

We investigate the radiation effects on single-photon avalanche diodes (SPADs) fabricated in CMOS technology. For this investigation, a high-performance SPAD based on a vertical p-i-n construction with buried-N layer is proposed and used for the characteri ...

2017

Myung Jae Lee

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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

Optocoupling in CMOS

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

CMOS-Based Single-Photon Detectors: Technology and Applications

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

Optocoupling in CMOS

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

CMOS-Based Single-Photon Detectors: Technology and Applications

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology