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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

Edoardo Charbon, Myung Jae Lee, Preethi Padmanabhan, Augusto Ronchini Ximenes

This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2

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8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared time-to ...

2019

Myung Jae Lee

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A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology

Optocoupling in CMOS

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

CMOS-Based Single-Photon Detectors: Technology and Applications

3D-Stacked CMOS SPAD Image Sensors: Technology and Applications

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

A 256×256 45/65nm 3D-stacked SPAD-based direct TOF image sensor for LiDAR applications with optical polar modulation for up to 18.6dB interference suppression

A Modular, Direct Time-of-Flight Depth Sensor in 45/65-nm 3-D-Stacked CMOS Technology

A back-illuminated 3D-stacked single-photon avalanche diode in 45nm CMOS technology, 2017 IEEE International Electron Devices Meeting (IEDM)

A Radiation-Tolerant, high performance SPAD for SiPMs implemented in CMOS technology

CMOS-Based Single-Photon Detectors: Technology and Applications

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Progress in single-photon avalanche diode image sensors in standard CMOS: From two-dimensional monolithic to three-dimensional-stacked technology

Optocoupling in CMOS

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

3D-Stacked CMOS SPAD Image Sensors: Technology and Applications