Person
Catherine Erine
This person is no longer with EPFL
Related publications (16)
Conformal Passivation of Multi-Channel GaN Power Transistors for Reduced Current Collapse
Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Halil Kerim Yildirim, Luca Nela, Catherine Erine, Kai Cheng
Multi-channel power devices, in which several AlGaN/GaN layers are stacked to achieve multiple two-dimensional electron gases (2DEGs), have recently led to a significant increase in the device conductivity while maintaining high breakdown voltage, resultin ...
2020High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance
Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...
20191200 V Multi-Channel Power Devices with 2.8 Ω•mm ON-Resistance
Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng
Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V BR ) and low ON-resistance (R ON ). The multi-channel structure was judiciously designed to yield a small sheet resistance (R s ) of 80 Ω/sq using only four 2DEG channels, ...
IEEE20191200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance
Elison de Nazareth Matioli, Jun Ma, Catherine Erine, Minghua Zhu, Kai Cheng
Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V-BR) and low ON-resistance (R-ON). The multi-channel structure was judiciously designed to yield a small sheet resistance (R-s) of 80 Omega/sq using only four 2DEG channels ...
IEEE2019On the Dynamic Performance of Laterally Gated Transistors
Elison de Nazareth Matioli, Armin Jafari, Catherine Erine, Giovanni Santoruvo
Laterally gated transistors have been proposed as an innovative device architecture in which a semiconducting channel is controlled by side gates. In this sense, the gate can either be in contact with the sidewalls or be separated by a gap. In the latter c ...
2019High-voltage Normally-off Recessed tri-gate GaN Power MOSFETs with Low On-resistance
Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu
In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH), while maintaining a low specific on resistance (RON,SP) and high current density ( ...
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