1200 V Multi-Channel Power Devices with 2.8 Omega.mm ON-Resistance

Here we report novel multi-channel AlGaN/GaN MOSHEMTs with high breakdown voltage (V-BR) and low ON-resistance (R-ON). The multi-channel structure was judiciously designed to yield a small sheet resistance (R-s) of 80 Omega/sq using only four 2DEG channels, resulting in an effective resistivity (rho(eff)) of only 1.1 m Omega.mm. The major limitation of high-conductivity multi-channel devices is their limited V-BR. This work shows that while conventional field plates (FPs) are not suited to increase V-BR in high-conductivity multi-channels, slanted tri-gates offer better electric field management inside the device. With a gate-to-drain separation (L-GD) of 15 mu m, the device presented a low R-ON of 2.8 Omega.mm (considering the full width of the device (w(device))) and a high V-BR of 1230 V, rendering a small specific R-ON (R-ON,(SP)) of 0.47 m Omega.cm(2) and an excellent figure-of-merit of 3.2 GW/cm(2). This work also shows the feasibility of E-mode multi-channel MOSHEMTs with a threshold voltage (V-TH) of +0.9 Vat 1 mu A/mm by tuning the tri-gate geometry. These results significantly outperfourr conventional single-channel devices and demonstrate the enormous potential of multi-channel power devices.