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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (
Kirigami, the ancient technique of paper cutting, has been successfully applied to enhance the stretchability and ductility of nanoscale graphene. However, existing experimentally realized graphene kirigami (GK) are created by introducing parallel cuts, ex ...