Unit
The Laboratory in Semiconductors Advances for Photonics and Electronics (LASPE) at EPFL focuses on researching group-III nitride semiconductors like GaN, AlN, and InN for applications in Photonics and Electronics. Their work includes investigating microcavities for strong coupling, quantum dots and nanostructures, two- and one-dimensional photonic crystals, and short-wavelength optoelectronics. LASPE also explores high-power electronics through the growth and physics of AlInN GaN 2D electron gas heterojunctions for high-electron mobility transistors.