Publications by Mohammad Samizadeh Nikooytabalvandani

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Electronic metadevices for terahertz applications

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

NATURE PORTFOLIO2023

Electronic metadevice

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Electronic metadevice comprising a conductive channel; a metal layer superposed on the conductive channel; and a barrier layer located between the metal layer and the conductive channel. The metal layer includes at least one recess extending through the me ...

2023

Electrical control of glass-like dynamics in vanadium dioxide for data storage and processing

Elison de Nazareth Matioli, Andras Kis, Andreas Schueler, Anna Krammer, Philip Johannes Walter Moll, Guilherme Migliato Marega, Reza Soleiman Zadeh Ardebili, Mohammad Samizadeh Nikooytabalvandani

Metal–oxide–semiconductor junctions are the building blocks of modern electronics and can provide a variety of functionalities, from memory to computing. The technology, however, faces constraints in terms of further miniaturization and compatibility with ...

2022

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

Beyond 8 THz Displacement-field Nano-switches for 5G and 6G Communications

Mihai Adrian Ionescu, Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani, Riyaz Mohammed Abdul Khadar, Pirouz Sohi

The rapid progress in high capacity communication systems is reaching extremely high data rates of 100 Gb s−1, which demands electronic switches with cut-off frequencies well above 1 THz. The excellent electron transport properties of III-V heterojunctions ...

IEEE2022

Enhanced-DAB Converter: Comprehensive Design Evaluation

Elison de Nazareth Matioli, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Furkan Karakaya

Soft switching in dual-active-bridge (DAB) converters enables their efficient operation at high frequencies, where the reduction in the size of magnetic components could result in ultra-high power densities. Nonetheless, losing soft-switching at high frequ ...

IEEE2021

Resonances on GaN-on-Si Epitaxies: A Source of Output Capacitance Losses in Power HEMTs

Elison de Nazareth Matioli, Armin Jafari, Minghua Zhu, Riyaz Mohammed Abdul Khadar, Mohammad Samizadeh Nikooytabalvandani

GaN-on-Si high-electron-mobility transistors (HEMTs) exhibit excellent properties for efficient power conversion. Nevertheless, a considerable energy loss associated with the charging and discharging of the output capacitance (COSS) in these transistors se ...

Institute of Electrical and Electronics Engineers2021

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Luca Nela, Taifang Wang, Mohammad Samizadeh Nikooytabalvandani

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...

Institute of Electrical and Electronics Engineers2021