Publications by Vladimir Pesic

From Master Equation to SPICE: A Platform to Model Cryo-CMOS Control for Qubits

Cryogenic classical electronics for the control of qubits can be placed near quantum processors for a more compact system, ultimately enabling a highly scalable one. However, cryogenic operation poses very strict power requirements on electronics, in addit ...

IEEE2024

Challenges and prospects for multi-chip microlens imprints on front-side illuminated SPAD imagers

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Vladimir Pesic, Tommaso Milanese, Scott Anthony Lindner

The overall sensitivity of frontside-illuminated, silicon single-photon avalanche diode (SPAD) arrays has often suffered from fill factor limitations. The fill factor loss can however be recovered by employing microlenses, whereby the challenges specific t ...

Optica Publishing Group2023

Extended Temperature Modeling of InGaAs/InP SPADs

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match we ...

IEEE2023

High-efficiency fill factor recovery using refractive microlens arrays imprinted on 0.5–256 kpixel front-side illuminated SPAD imagers

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Vladimir Pesic, Tommaso Milanese, Scott Anthony Lindner, Frédéric Zanella

Silicon-based single-photon avalanche diodes (SPADs) implemented in front-side illuminated arrays and imagers have often suffered from fill factor limitations. The corresponding reduced sensitivity can be sometimes traded off with longer acquisition times ...

SPIE2023

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022