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Alessandro Floriduz

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Alessandro Floriduz

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Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Quasi-vertical GaN-on-Si reverse blocking power MOSFETs

Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

p-NiO junction termination extensions for GaN power devices

p-NiO Junction Termination Extensions for High Voltage Vertical GaN Devices

Approximate Kron Reduction Methods for Electrical Networks With Applications to Plug-and-Play Control of AC Islanded Microgrids