Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy
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We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...
We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
The polarity of GaN epilayers grown by molecular beam epitaxy is controlled using Mg. This is achieved by simultaneously exposing the surface to Mg and NH3 fluxes during growth interruption. Reflection high-energy electron diffraction (RHEED) indicates the ...
We investigate both theoretically and experimentally the effects of the In surface segregation in InGaN/GaN quantum wells (QWs). It is shown that this phenomenon induces a blue-shift of the QW photoluminescence (PL) energy, which does not depend on the QW ...
In the present paper, we address a review of group-III nitride quantum wells and quantum dots realized by molecular beam epitaxy (MBE) using ammonia as a nitrogen source. Some important features of the growth of nitrides by MBE using ammonia are pointed ou ...
Quantitative analysis of high resolution electron microscopy image has been carried out to measure the indium distribution inside InGaN/GaN quantum well. The analyzed samples were nominally grown with 15% indium composition by molecular beam epitaxy with i ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
GaN quantum dots (QDs) in an AlN matrix have been grown on Si(111) by molecular-beam epitaxy. The growth of GaN deposited at 800 degrees C on AlN has been investigated in situ by reflection high-energy electron diffraction. It is found that a growth interr ...
Due to the peculiarities of the growth process of GaN and related alloys on sapphire substrates, reflection high-energy electron diffraction (RHEED) is not sufficient to correctly monitor all the different steps of molecular beam epitaxy growth (MBE). It i ...
