Quantitative analysis of electron-beam-induced current profiles across p-n junctions in GaAs/Al0.4Ga0.6As heterostructures
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In this thesis we study the electronic structure of different two-dimensional (2D) electron systems with angular resolved photoemission spectroscopy (ARPES). This technique is based on the photoelectric effect and directly probes the electronic structure o ...
This study reports the photosensitizing effect/mechanism of FeOx under visible light irradiation and charge transfer to TiO2 on FeOx–TiO2 cosputtered film. The transients which were photo-induced by femtosecond laser pulses at 545 nm (25 fs) were identifie ...
Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...
We employ grazing-incidence femtosecond x-ray diffraction to characterize the coherent, femtosecond laser-induced lattice motion of a bismuth crystal as a function of depth from the surface with a temporal resolution of 193 +/- 8 fs. The data show direct c ...
The kinetic competition between electron-hole recombination and water oxidation is a key consideration for the development of efficient photoanodes for solar driven water splitting. In this study, we employed three complementary techniques, transient absor ...
We perform scanning photocurrent microscopy on WS2 ionic liquid-gated field effect transistors exhibiting high-quality ambipolar transport. By properly biasing the gate electrode, we can invert the sign of the photocurrent showing that the minority photoca ...
The performance of silicon based microelectronic circuits reaches the end of the roadmap. New material systems are required for further improvements in speed and power consumption. Germanium is a possible candidate to substitute silicon for microelectronic ...
A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolut ...
We study wurtzite GaN/AIN quantum dots (QDs) by time-resolved photoluminescence. The properties of nitride based nano-objects are significantly affected by strong built-in electric fields existing in this crystalline phase. These fields induce a spatial se ...
We have developed an original time resolved cathodoluminescence (TRCL) set-up with temporal performances similar to those of conventional time resolved optical techniques, keeping the capability to get structural information through the secondary electron ...