Density dependence of carrier-carrier-induced intersubband scattering in GaAs/AlxGa1-xAs quantum wells
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We study wurtzite GaN/AIN quantum dots (QDs) by time-resolved photoluminescence. The properties of nitride based nano-objects are significantly affected by strong built-in electric fields existing in this crystalline phase. These fields induce a spatial se ...
The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...
Photonic crystal (PC) cavities enable localization of light into volumes (V) below a cubic optical wavelength (smaller than any other types of optical resonators) with high quality (Q) factors [1]. This permits a strong interaction of light and matter, whi ...
By means of an electron hole rate equation model we explain the phase dynamics of a quantum dot semiconductor optical amplifier and the appearance of different decay times observed in pump and probe experiments. The ultrafast hole relaxation leads to a fir ...
The dynamics of charging and recombination of photoexcited, site-controlled semiconductor quantum dots (QDs) are investigated using microphotoluminescence (PL) and photon-correlation spectroscopy combined with rate equation modeling. Several species of neu ...
We present an experimental and theoretical study of the size dependence of the coupling between electron-hole pairs and longitudinal-optical phonons in Ga1-xInxN/GaN-based quantum wells and quantum boxes. We found that the Huang-Rhys factor S, which determ ...
The dynamics of charging and recombination of photoexcited, site-controlled semiconductor quantum dots (QDs) are investigated using microphotoluminescence (PL) and photon-correlation spectroscopy combined with rate equation modeling. Several species of neu ...
Influence of hydrostatic pressure on the light emission from strained GaN/AlGaN multi-quantum-well systems has been studied, Pressure coefficients of the photoluminescence peak energies show a strong reduction with respect to that of the GaN energy ? ap an ...
Recombination dynamics in a variety of InGaN/GaN quantum systems has been studied by time resolved photoluminescence (PL). We have discovered that the time-decay of PL exhibits a scaling law: the nonexponential shape of this decay is preserved for quantum ...
MBE-grown samples containing several GaN-AlxGa1-xN quantum wells of varying widths are studied by picosecond time-resolved photoluminescence. Extremely strong built-in electric fields are present in such systems, due to piezoelectric and pyroelectric effec ...