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Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 mu m

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Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Ultrafast carrier and quasiparticle dynamics in strongly confined perovskite nanoplatelets

Etienne Christophe Socie

Over the past decade, lead halide perovskites (LHPs) have received considerable attention thanks to their impressive optoelectronic properties. Today, LHP-based devices are one of the most efficient single-junction solar cells, with power-conversion effici ...

EPFL2022

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Strongly confined, fully inorganic cesium lead halide perovskite nanocrystals are of great promise for light-emitting devices in the blue spectral range owing to their high photoluminescence quantum yields. A combination of broadband fluorescence up-conver ...

2021

Nano-emitting Heterostructures Violate Optical Reciprocity and Enable Efficient Photoluminescence in Halide-Segregated Methylammonium-Free Wide Bandgap Perovskites

Christophe Ballif, Quentin Thomas Jeangros, Christian Michael Wolff, Chien-Jen Yang, Peter Joseph Fiala, Pietro Caprioglio

This work investigates halide segregation in methylammonium-free wide bandgap perovskites by photoluminescence quantum yield (PLQY) and advanced electron microscopy techniques. Our study reveals how the formation of nano-emitting low-energy domains embedde ...

AMER CHEMICAL SOC2021

Triazenes are very useful compounds in organic synthesis, materials science, and medicine. Among numerous reported triazene derivatives, aryl triazenes are the most investigated. Triazenes with alkynyl, vinyl, and alkyl groups were, until recently, largely ...

EPFL2020

Determination of the internal piezoelectric potentials and indium concentration in InGaN based quantum wells grown on relaxed InGaN pseudo-substrates by off-axis electron holography

Micro light emitting diodes have been grown by metal organic vapor phase epitaxy on standard GaN and partly relaxed InGaNOS substrates with the purpose of incorporating higher concentrations of indium for identical growth conditions. Green emission has bee ...

2020

Since the seminal report about the first Candela-class-brightness InGaN blue light-emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

EPFL2019

Only recently organic light-emitting diode (OLED) technology has successfully managed the transition from research labs into the consumer market, taking a 60% share of the global mobile display market in 2018. The latest discovery of thermally activated de ...

EPFL2019

The efficiency and peculiarities of processes such as surface adsorption or electron-to-photon energy conversion in organic and inorganic structures are determined by the dynamics at the scale of individual molecules, atoms and charges. The timescales of s ...

EPFL2019

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Wei Liu, Camille Haller

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

AMER INST PHYSICS2018