Exciton localization and diffusion in low-dimensional nanostructures formed on non-planar substrates
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
We report on a transparent analysis of the luminescence spectra of dense electron-hole plasmas confined in GaAs/(Ga,Al)As quantum wells. We fit the spectra using the fact that the total number of particle states does not depend on collision broadening. Fur ...
We discuss the statistical properties of polaritons in quantum wells embedded in a microcavity. In particular we evaluate the amount of squeezing of confined exciton polaritons in a GaAs quantum well. The limit of a large cavity is also considered. ...
We present an investigation of the optical gain and its saturation of the electron-hole plasma confined in GaAs/(Ga,Al)As quantum wells. For such investigations the variable stripe length method is a simple but quite powerful tool. The spacial longitudinal ...
Type II double barrier AlxGa1-xAs/AlAs/GaAs quantum wells with ultra-thin AlAs layers (1 or 2 monolayers (ML) wide) have been studied by photoluminescence as a function of the substrate misorientation. A blue shift of the recombination lines is observed wh ...
The lateral transport of excess carriers in metal organic chemical vapor deposition grown GaAs/AlxGa1-xAs(x=0.5) 20 angstrom thick single quantum well structures is studied by cathodoluminescence (CL) between 5 K less-than-or-equal-to T less-than-or-equal- ...
GaAs/AlxGa1-xAs multiple-quantum-well structures with identical well thicknesses (almost-equal-to 119 angstrom) but with different Al contents x in the barrier (x almost-equal-to 0. 1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy. We report the c ...
We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostruc ...
The optical properties of low pressure metal organic vapor deposition grown GaAs/AlxGa1-xAs (x = 0.5) single quantum well structures (SQW) with grown-in dislocations (GD) were studied by low temperature cathodoluminescence (CL) and photoluminescence (PL). ...
Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
Photodissocn. of H2O (D2O) and Cl2 trapped in rare gas matrixes was studied in relation to the cage effect. Barrier energies for the exit of the fragments from the matrix cage were detd., together with the excess kinetic energy dependence of the photodisso ...
